| PART |
Description |
Maker |
| MX23C1100 23C1100 |
1M-BIT[128Kx8/64Kx16]CMOS MASK ROM
From old datasheet system
|
Macronix 旺宏
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CAT28C513PI-12T CAT28C513PI-15T CAT28C512TI12T CAT |
512K-Bit CMOS PARALLEL EEPROM
128Kx8 EEPROM 128Kx8 EEPROM
|
http://
Catalyst Semiconductor
NXP Semiconductors N.V.
Atmel, Corp.
|
| K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| KM681000ELT-7L KM681000ELG-5 KM681000ELG-7 KM68100 |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
EEPROM EEPROM
EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷
EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC
60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
|
White Electronic Designs
Mosel Vitelic, Corp.
International Rectifier, Corp.
TE Connectivity, Ltd.
KODENSHI, CORP.
Microchip Technology, Inc.
Century Container
|
| KM6161002A KM6161002AJ-15 |
64Kx16 Bit High Speed Static RAM
|
SAMSUNG
|
| AM29LV104BT-90JIB AM29LV104B AM29LV104BB-120EC AM2 |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector 32-Pin Flash Memory
IC SMT S-RAM 128KX8 IS62C1024L
SWITCH KEYLOCK SPDT MOM 4A
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 4兆位12亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
|
